| ‘? > B120 thru B1607 Www'V'Shay'C°m Vishay General Semiconductor 10 B150 and E160 Average Power Loss (W) instantaneous Forward Current (A) E150 and E160 Number of Cycles at 50 Hz Percent of Rated Peak Reverse Voltage (%) 0.01 0 0.2 0.4 06 DE 10 1.2 0 0.2 0.4 DE DE 10 1.2 1.4 Average Forward Currem (A) instantaneous FOnNard Voltage (V)Fig. 3 - FonNard Power Loss Characteristics Fig. 6 - Typical Instantaneous Forward Characteristics 100 000 44474447 4447 B120 thru B140 . _ B150 and E160 (HA) 3 DDo 1000 100 10 Peak Forward Surge Current (A) instantaneous Reverse Current Fig. 4 - Typical Instantaneous FonNard Characteristics Fig. 7 - Typical Reverse Leakage Characteristics 1000 instantaneous Forward Current (A)‘Junction Capacitance (pF) 3o B120 thru B140 ---- E150andE160 0 0 2 0 4 0 6 0 E 1 0 1 2 1 4 10 Instantaneous Fonlvard Voltage MReverse Voltage (V) Fig. 5 - Typical Instantaneous Fonlvard Characteristics Fig. 8 - Typical Junction Capacitance Revision: 27-Mar-12 3 Document Number: 88946 For technical questions within your region: Diode§Americas@vishay.com, DiodesAsia@vishay.com, DigdesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.visha . m/d c7910 0 |